Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs

摘要

We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te)n- and p- channel metal-oxide-semiconductor field effect transistors (MOSFETs)using full-band ballistic non-equilibrium Green's function simulations with anatomistic tight-binding Hamiltonian with hopping potentials obtained fromdensity functional theory. We discuss the subthreshold slope, drain-inducedbarrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) fordifferent monolayer MX2 MOSFETs. We also report the possibility of negativedifferential resistance behavior in the output characteristics of nanoscalemonolayer MX2 MOSFETs.